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Etching Process of Al Oxide on Si Surface with HF Treatment

Published online by Cambridge University Press:  10 February 2011

T. Hoshino  and
Y. Nishioka
T. Hoshino
Affiliation:
Faculty of Pharmaceutical Sci., Chiba University, 3–4–1 Yayoi-cho, Inage, Chiba 263, Japan Texas Instruments Tsukuba R&D Center Limited, 17 Miyukigaoka, Tsukuba 305, Japan
Y. Nishioka
Affiliation:
Texas Instruments Tsukuba R&D Center Limited, 17 Miyukigaoka, Tsukuba 305, Japan
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Abstract

ab initio theoretical calculations have been performed to reveal the etching mechanism of HF with Al metal oxide on Si surfaces. The following sequential process has been revealed to be the most probable reaction path. HF + AlO-Si surface → HO-Si surface + AlF (1), HF + HO-Si surface → F-Si surface + H2O (1'). Both of the reactions have potential energy barriers of 0.8∼1.0eV, and are exothermic by 0.3 and l. leV, respectively. Another reaction path that proceeds with one-step process, HF + AlO-Si surface → F-Si surface + AlOH (2), is also found to be probable for AlO etching.

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References

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