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Estimation of Emissivity of a Wafer in an RTP Chamber by a Dynamic Observer

Published online by Cambridge University Press:  10 February 2011

Sergey Belikov ,
David Hur ,
Bernard Friedl  and
N. M. Ravindra
Sergey Belikov
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
David Hur
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
Bernard Friedl
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

A method of estimation of wavelength-dependent emissivity of silicon wafers using thermocouple measurements is presented here. A dynamic observer and a persistent excitation of the lamps are required for convergence of the observer's estimates to the actual values of parameters for emissivity approximation. A TI designed RTP equipment and adaptive close-loop temperature control have been used to generate the required persistent excitation. Theory of emissivity estimation by this method has been developed and illustrated by experiment with this 3- zone RTP system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 335
Copyright
Copyright © Materials Research Society 1996

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References

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