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ESR in 13C Enriched a-Si1−xCx:H

Published online by Cambridge University Press:  25 February 2011

Xixiang Xu ,
Hideo Kidoh ,
Akiharu Morimoto ,
Minoru Kumeda  and
Tatsuo Shimizu
Xixiang Xu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Hideo Kidoh
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Akiharu Morimoto
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Tatsuo Shimizu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
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Abstract

The effect of using the 13C isotope on the ESR signal in a-Si1−x Cx:H is investigated. The ESR linewidth increases with increasing the C content for a-Si1−x Cx.:H with 12C, while it is almost unchanged for a-Si1−x Cx:H with 12C. However, a doublet line which is expected for a C dangling bond having the hyperfine interaction with the 13C nucleus was not detected. In the range of a small x, it is possible that Si dangling bonds with 13C at the back bonds are the origin of the wide ESR signal. In the range of a large x, 13C dangling bonds should exist, but they are in a clustered form, being observed as an exchange narrowed single line instead of the hyperfine split line.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 557
Copyright
Copyright © Materials Research Society 1989

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References

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