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Er environment in a-Si:HEr> prepared by PECVD

Published online by Cambridge University Press:  17 March 2011

Cínthia Piamonteze ,
Leandro R. Tessler ,
Hélio Tolentino ,
Maria do Carmo Martins Alves ,
Gerhard Weiser  and
Eugeny Terukov
Cínthia Piamonteze
Affiliation:
Instituto de Física “Gleb Wataghin”, UNICAMP, C. P. 6165, 13083-970 Campinas, SP, Brazil
Leandro R. Tessler
Affiliation:
Instituto de Física “Gleb Wataghin”, UNICAMP, C. P. 6165, 13083-970 Campinas, SP, Brazil
Hélio Tolentino
Affiliation:
Laboratório Nacional de Luz Síncrotron, C. P. 6093, 13083-970, Campinas, SP, Brazil
Maria do Carmo Martins Alves
Affiliation:
Laboratório Nacional de Luz Síncrotron, C. P. 6093, 13083-970, Campinas, SP, Brazil
Gerhard Weiser
Affiliation:
Marburg University, Marburg, Germany
Eugeny Terukov
Affiliation:
A. F. Ioffe Institute, St. Petersburg, Russia
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Abstract

The Er local environment of a-Si:H<Er> prepared by PECVD using a metalorganic precursor was determined by EXAFS. We found that in as-deposited samples Er is coordinated to 6 oxygen atoms at 2.28±0.01Å, very similar to Er2O3. Annealing at 420°C hardly affects the Er neighborhood, but higher annealing temperatures (starting at 600°C up to 1033°C) decrease the Er-O separation as much as 0.05Å, maintaining the Er average coordination around 6. This is interpreted as due to the formation of a carbon second neighbor shell. Our results show that the Er local environment is not related with the luminescence enhancement for annealing at moderate temperatures.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A11.2
Copyright
Copyright © Materials Research Society 2000

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References

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