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“Equilibrium Oxide” Features of the SIMOX Process

Published online by Cambridge University Press:  28 February 2011

H. H. Hosack ,
J. Hollingsworth ,
M. K. El-Ghor  and
K. A. Joyner
H. H. Hosack
Affiliation:
Texas Instruments, Incorporated Dallas, Texas 75265
J. Hollingsworth
Affiliation:
Texas Instruments, Incorporated Dallas, Texas 75265
M. K. El-Ghor
Affiliation:
Texas Instruments, Incorporated Dallas, Texas 75265
K. A. Joyner
Affiliation:
Texas Instruments, Incorporated Dallas, Texas 75265
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Abstract

The equilibrium configuration produced when the SIMOX process is carried to the extreme of complete conversion of the silicon film to oxide is described. The thickness of the “equilibrium oxide” produced is modelled using a joined Gaussian approximation to the oxygen implant profile. The “equilibrium oxide” for a 190KeV implant is investigated. This material is found to have a thickness of approximately 5400 angstroms, and to be a very homogeneous film with essentially stoichiometric SiO2 composition. The implications of this work for use of oxides in patterned SIMOX are discussed.

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References

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