Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-11T00:48:17.164Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of Zinc-Blende Ain by Plasma Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

Margarita P. Thompson ,
Gregory W. Auner ,
Andrew R. Drews ,
Tsvetanka S. Zheleva  and
Kenneth A. Jones
Margarita P. Thompson
Affiliation:
CH&MSE Dept., Wayne State University, 5050 Anthony Wayne Dr., Detroit, MI 48202
Gregory W. Auner
Affiliation:
ECE Dept., Wayne State University, 5050 Anthony Wayne Dr., Detroit, MI 48202
Andrew R. Drews
Affiliation:
Physics Dept., SRL, Ford Motor Company, 20000 Rotunda Dr., Dearborn, MI 48121
Tsvetanka S. Zheleva
Affiliation:
Physics Dept., SRL, Ford Motor Company, 20000 Rotunda Dr., Dearborn, MI 48121
Kenneth A. Jones
Affiliation:
SEDD, US Army Research Laboratory, Adelphi, MD 20783
Get access

Abstract

Epitaxial zinc-blende AIN films as thick as 2000Å were deposited on Si (100) substrates by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AIN was observed to occur when pulse d.c. power was supplied to the PSMBE hollow cathode source. Reflection High Energy Electron Diffraction (RHEED) showed that the films possess a four fold symmetry. X-Ray Diffraction (XRD) revealed two strong peaks corresponding to the (200) and (400) reflections from the zinc-blende AIN. The lattice parameter of the films was calculated to be approximately 4.373Å. TEM, performed on one of the films, revealed that the AIN is cubic, single crystalline and epitaxial with respect to the Si (100) substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 297
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Strite, S. and Morkoq, H., J. Vac. Sci. Technol. B 10 (1992) 1237.Google Scholar
2. Rowland, L.B., Kern, R.S., Tanaka, S., and Davis, Robert F., J. Mater. Res. 8 (1993) 2310.Google Scholar
3. Petrov, I., Mojab, E., Powell, R.C., Greene, J.E., Hultman, L., and Sundgren, J.E., Appl. Phys. Lett. 60 (1992) 2491.Google Scholar
4. Okumura, H., Ohta, K., Feuillet, G., Balakrishnan, K., Chichibu, S., Hamaguchi, H., Hacke, P., Yoshida, S., J. of Cryst. Growth 178 (1997) 113.Google Scholar
5. Powell, R.C., Lee, N.E., Kim, Y.W., and Greene, J.E., J. Appi. Phys. 73 (1993) 189.Google Scholar
6. Strite, S., Chandrasekhar, D., Smith, David J., Sariel, J., Chen, H., Teraguchi, N., and Morkoq, H., J. of Cryst. Growth 127 (1993) 204.Google Scholar
7. Sherwin, M.E., and Drummond, T.J., J. Appl. Phys. 69 (1991) 8423.Google Scholar
8. Auner, G.W., Lenane, T.D., Ahmad, F., Naik, R., Kuo, P.K., and Wu, Z., in Wide Band Gap Electronic Materials edited by Prelas, M. A. et al. (Kluwer Academic Publishers, Netherlands, 1995).Google Scholar