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Epitaxial Growth of Thin Ge Films on [001] Gaas by Laser Photochemical Vapor Deposition from GeH4

Published online by Cambridge University Press:  26 February 2011

V. Tavitian ,
C. J. Kiely  and
J. G. Eden
V. Tavitian
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, 1406 West Green Street, Urbana, IL 61801
C. J. Kiely
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, 1406 West Green Street, Urbana, IL 61801
J. G. Eden
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, 1406 West Green Street, Urbana, IL 61801
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Abstract

Epitaxial Ge films have been grown on [001] GaAs for substrate temperatures (Ts) as low as 285°C by photodissociating GeH4 at 193 nm in parallel geometry. For a laser fluence of ~15 mJ - cm-2, the film growth rate varies from 0.6 to ~5 nm - min-1, depending upon Ts and gas pressure. Plan and cross-sectional TEM studies of the Ge/GaAs bicrystal demonstrate that the 400–700 A thick Ge films are single crystal and epitaxial with the substrate. The present limitation on epitaxial film thickness appears to be imposed by reduced adatom mobility at the temperatures investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 349
Copyright
Copyright © Materials Research Society 1998

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References

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