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Epitaxial Growth of NiSi2 and CoSi2 on Laterally Confined Silicon by Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

H.F. Hsu ,
J.J. Chu  and
L.J. Chen
H.F. Hsu
Affiliation:
Department of Materials Sicence and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
J.J. Chu
Affiliation:
Department of Materials Sicence and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Sicence and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

Epitaxial growth of NiSi2 and CoSi2 on silicon inside miniature oxide openings by rapid thermal annealing has been studied. Effects of lateral confinement, including two-dimensional and linear oxide openings, as well as deposition methods on the growth of NiSi2 and CoSi2 on silicon were investigated. Vast difference found in the behaviors of the growth of epitaxy inside oxide openings between samples with the metal films deposited by electron beam evaporation and sputtering are attributed to the differences in the geometrical configuration of the films and stress levels as well as surface cleanliness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 223
Copyright
Copyright © Materials Research Society 1989

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References

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