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Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

Published online by Cambridge University Press:  10 February 2011

Philippe Mérel ,
Mohamed Chaker ,
Henri Pépin  and
Malek Tabbal
Philippe Mérel
Affiliation:
INRS-Énergie et Matériaux, 1650 boul. Lionel Boulet, Varennes, Québec, Canada J3X IS2, merel@inrs-ener.uquebec.ca
Mohamed Chaker
Affiliation:
INRS-Énergie et Matériaux, 1650 boul. Lionel Boulet, Varennes, Québec, Canada J3X IS2, merel@inrs-ener.uquebec.ca
Henri Pépin
Affiliation:
INRS-Énergie et Matériaux, 1650 boul. Lionel Boulet, Varennes, Québec, Canada J3X IS2, merel@inrs-ener.uquebec.ca
Malek Tabbal
Affiliation:
Department of Physics, American University of Beirut, P.O. Box: 11–0236, Bliss Street, Beirut, Lebanon.
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Abstract

A hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

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References

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