Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-08T10:24:06.841Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of Dilute Magnetic Semiconductors: GaMnN and GaMnP

Published online by Cambridge University Press:  21 March 2011

Mark E. Overberg ,
Cammy R. Abernathy ,
Stephen J. Pearton ,
Fred Sharifi ,
Arthur F. Hebard ,
Nineta Theodoropoulou ,
Stephan von Molnar ,
Madjid Anane  and
Peng Xiong
Mark E. Overberg
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, U.S.A
Cammy R. Abernathy
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, U.S.A
Stephen J. Pearton
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, U.S.A
Fred Sharifi
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, U.S.A
Arthur F. Hebard
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, U.S.A
Nineta Theodoropoulou
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, U.S.A
Stephan von Molnar
Affiliation:
Department of Physics and MARTECH, Florida State University, Tallahassee, FL 32306, U.S.A
Madjid Anane
Affiliation:
Department of Physics and MARTECH, Florida State University, Tallahassee, FL 32306, U.S.A
Peng Xiong
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, U.S.A
Get access

Abstract

Epitaxial growth of the dilute magnetic semiconductors GaMnP and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP films grown with < 4.5% Mn show the preferential formation of the second phases MnP and Mn5.64P3, resulting in only a slight deviation from purely diamagnetic behavior. GaMnN films grown on both Al2O3 and Metal-Organic Chemical Vapor Deposition (MOCVD) derived GaN surfaces show strong ferromagnetism when grown with either C codoping or at elevated temperatures to raise the concentration of n-type carriers. Comparable GaMnN films grown under conditions which produce highly resistive material show only paramagnetism, indicating the importance of carrier concentration on the resulting magnetic behavior. The formation of second phases was not observed in the GaMnN material for Mn concentrations less than 9%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 674: Symposia T/U/V – Applications of Ferromagnetic and Optical Materials, Storage and Magnetoelectronics , 2001 , T6.5
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Prinz, G. and Hathaway, K., Phys. Today 48, 24–25 (1995).Google Scholar
(2) DiVencenzo, D., Science 270, 255–261 (1995).Google Scholar
(3) Deutsch, D., Proc. R. Soc. Lond. A 400, 97–117 (1985).Google Scholar
(4) Tanaka, M., J. Crys. Growth 201/202, 660–669 (1999).Google Scholar
(5) Lee, B., Jungwirth, T., and MacDonald, A. H., Phys. Rev B 61 (23), 15606–15609 (2000).Google Scholar
(6) Dietl, T., Ohno, H., Matsukara, F., Cibert, J., and Ferrand, D., Science 287, 1019–1022 (2000).Google Scholar
(7) Ohno, H., Science 281, 951–956 (1998).Google Scholar
(8) Munekata, H., Zaslavsky, A., Fumagalli, P., and Gambino, R. J., Appl. Phys. Lett. 63 (21), 2929–2931 (1993).Google Scholar
(9) Matukura, F., Abe, E., and Ohno, H., J. Appl. Phys. 87 (9), 6442–6444 (2000).Google Scholar
(10) Zajac, M., Doradzinski, R., Gosk, J., Szczytko, J., Lefeld-Sosnowska, M., Kaminska, M., Twardowski, A., Palczewska, M., Grzanka, E., and Gebicki, W., Appl. Phys. Lett. 78 (9), 1276–1278 (2001).Google Scholar