Hostname: page-component-f554764f5-246sw Total loading time: 0 Render date: 2025-04-16T20:38:16.871Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of Cerium Oxide Buffer Layers on MgO, YSZ and Sapphire Substrates

Published online by Cambridge University Press:  10 February 2011

A. Thorley ,
S. Gnanarajan ,
A. Katsaros  and
N. Savvides
A. Thorley
Affiliation:
CSIRO Telecommunications and Industrial Physics, Sydney, Australia, 2070
S. Gnanarajan
Affiliation:
CSIRO Telecommunications and Industrial Physics, Sydney, Australia, 2070
A. Katsaros
Affiliation:
CSIRO Telecommunications and Industrial Physics, Sydney, Australia, 2070
N. Savvides
Affiliation:
CSIRO Telecommunications and Industrial Physics, Sydney, Australia, 2070
Get access

Abstract

We studied the epitaxial growth of CeO2 thin films deposited onto MgO(100), YSZ(100) and Al2O3(1102 ) (r-plane sapphire) substrates by reactive dc magnetron sputtering of a Ce metal target in an Ar/O2 plasma. The crystalline quality and biaxial alignment of the films was determined using x-ray diffraction techniques (θ-2θ, ω-scans, pole figures, ø-scans). The CeO2/MgO(100) and CeO2/Al2O3(1102) epitaxy was evident at 600°C and developed to nearly perfect biaxial alignment at 850°C with Δø = 5° and 9° respectively. The CeO2/YSZ (100) epitaxy occurred below 300°C while deposition at ≥ 650°C led to single-crystal quality CeO2 films with Δø = 0.2°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 191
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Cole, B.F., Liang, G.-C., Newman, N., Char, K. and Zaharchuk, G., Appl. Phys. Lett. 61, 1727–9 (1992).Google Scholar
2 Lorenz, M., Hochmuth, H., Natusch, D. and Kreher, K., Appl. Phys. A 69, S905–11 (1999).Google Scholar
3 Jacobsen, S.N., Madsen, L.D. and Helmesson, U., J. Mater. Res. 14, 2385–93 (1999).Google Scholar
4 Iijima, Y., Hosaka, M., Tanabe, N., Sadakata, N., Saitoh, T., Kohno, O. and Takeda, K., J. Mater. Res. 12, 2913–23 (1997).Google Scholar
5 Norton, D.P., Goyal, A., Budai, J.D., Christen, D.K., Kroeker, D.M., Specht, E.D., He, Q., Saffian, B., Paranthaman, M., Klabunde, C.E., Lee, D.F., Sales, B.C. and List, F.A., Science 274, 755–7 (1996).Google Scholar
6 Savvides, N., Gnanarajan, S., Katsaros, A., Int. Cryogenic Eng. Conf. 1998, eds Dew-Hughes, D., Scurlock, R.G. and Watson, J.H.P. (Inst. Phys., Bristol), p. 411.Google Scholar
7 Savvides, N., Gnanarajan, S., Thorley, A., Katsaros, A., Herrmann, J., Müller, K.-H. and Clissold, R., Proc. EUCAS'99, Sitges, Spain, 14-17 Sept. 1999.Google Scholar
8 Gnanarajan, S., Katsaros, A. and Savvides, N., Appl. Phys. Lett. 70, 2816–8 (1997).Google Scholar
9 Jones, J.T., Bridger, P.M., Marsh, O.J. and McGill, T.C., Appl. Phys. Lett. 75, 1326–8 (1999).Google Scholar
10 Steele, B.C.H., Nature 400, 619–21 (1999).Google Scholar