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Epitaxial Growth of BaF2 on Semiconductor Substrates

Published online by Cambridge University Press:  15 February 2011

J. M. Phillips ,
L. C. Feldman ,
J. M. Gibson  and
M. L. Mcdonald
J. M. Phillips
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
L. C. Feldman
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
J. M. Gibson
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
M. L. Mcdonald
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
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Abstract

We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF2 on InP(111) through fair for BaF2 on InP(100) to excellent for BaF2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF2 on Ge(l11). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF2–Ge(111) interface in spite of the 9.1% lattice mismatch.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 101
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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