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Epitaxial Growth and Stability of C49 TiSi2 ON Si(111).

Published online by Cambridge University Press:  28 February 2011

Hyeongtag Jeon ,
J. W. Honeycutt ,
C. A. Sukow ,
T. P. Humphreys ,
R. J. Nemanich  and
G. A. Rozgonyi
Hyeongtag Jeon
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
J. W. Honeycutt
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
C. A. Sukow
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
T. P. Humphreys
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. A. Rozgonyi
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Epitaxial TiSi2 films have been grown by molecular beam epitaxy (MBE) on atomically clean Si(111)-orientated substrates. The growth procedure involves the ambient temperature deposition of Ti films of 50Å thickness and annealing to 800°C. In situ low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) techniques have been used to monitor the TiSi2 formation process. The epitaxial films have been identified as the C49 metastable phase by both Raman spectroscopy and electron diffraction. Plan view transmission electron microscopy shows three different connected island morphologies. The individual island structures are single crystal and are grown epitaxially with different crystallographic orientations. The orientational relationship of the largest islands is given by [3 1 1] C49 TiSi2//[112]Si and (130) C49 TiSi2//(l1 1)Si. High resolution transmission electron microscopy (HRTEM) cross-section shows a coherent interface extending over several hundred angstroms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 595
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Beyers, R., and Sinclair, R., J. Appl. Phys. 57, 5240 (1985).Google Scholar
2. Cantana, A., Schmid, P. E., Heintze, M., and Levy, F., J. Appl. Phys. 67, 1820 (1990)Google Scholar
3. Wu, I. C., Chu, J. J., and Chen, L. J., J. Appl. Phys. 60, 3172 (1986)Google Scholar
4. Fung, M. S., Cheng, H. C., and Chen, L. J., Appl. Phys. Lett. 47, 1312 (1985)Google Scholar
5. Nemanich, R. J., Fiordalice, R., and Jeon, Hyeongtag, IEEE. J. Quant. Elect. 25, 997 (1989).Google Scholar
6. Jeon, Hyeongtag, Nemanich, R. J., Thin Solid Films 184, 357 (1990).Google Scholar
7. Jeon, Hyeongtag, Nemanich, R. J., Honeycutt, J. W., and Rozgonyi, G. A., Mat. Res. Soc. Symp. Proc. 160, (in press).Google Scholar
8. Nemanich, R. J., Doland, C. M., Fulks, R. T., and Ponce, F. A., Mat. Res. Soc. Symp. Proc. 54, 255 (1986).Google Scholar
9. Jeon, Hyeongtag, Sukow, C. A., Honeycutt, J. W., Humphreys, T. P., Nemanich, R. J., and Rozgonyi, G. A., Mat. Res. Soc. Symp. Proc., (Symposium B, 1990 Spring MRS Meeting).Google Scholar