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Epitaxial GaAs on Si: Progress and Potential Applications

Published online by Cambridge University Press:  28 February 2011

Don W. Shaw
Don W. Shaw*
Affiliation:
Materials Science LaboratoryTexas Instruments IncorporatedP.O. Box 655936,MS-147 Dallas,TX 75265
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Abstract

Recent successes, such as the demonstration of a 1K SRAM, have established epitaxial GaAs on Si substrates as a promising technology rather than a device designer's dream. For the first time we can seriously consider combining the individual electronic and optical properties of GaAs and Si within a single epitaxial structure. Applications for GaAs on Si range from those that simply utilize the Si as a low-cost, large-areapassive substrate with superior strength and thermal conductivity to the long-sought multifunction integrated circuits where Si and III–V components are integrated within a single monolithic chip. This paper will attempt to provide a realistic appraisal of the potential applications of epitaxial GaAs on Si with emphasis on the special demands imposed by each application and barriers that must be circumvented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 15
Copyright
Copyright © Materials Research Society 1987

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