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Enhanced Vortex Pinning and Critical Current Density in Proton-Irradiated YBa2Cu3O7-δ Thin Films

Published online by Cambridge University Press:  25 February 2011

E. L. Venturing ,
M. P. Siegal ,
A. E. White ,
S. Y. Hou  and
Julia M. Phillips
E. L. Venturing
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
M. P. Siegal
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
A. E. White
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
S. Y. Hou
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The appropriate fluence of 2.0 MeV H1 ions has been shown previously to enhance the critical current density Jc by a factor of two at a magnetic field of 0.9 tesla in 1000 Å thick epitaxial films of YBa2Cu3O7-δ grown by the ex situ BaF2 process. The as-grown films exhibit single crystal-like behavior in both atomic ordering and Jc versus temperature and magnetic field. TRIM simulations suggest that H+ irradiation generates mainly point delects throughout the crystal structure. We show here that such defects result in an even greater enhancement of Jc for fields above 1 tesla plus a significant increase in the apparent vortex pinning potential deduced from magnetization relaxation data.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 463
Copyright
Copyright © Materials Research Society 1993

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