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Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles

Published online by Cambridge University Press:  28 February 2011

M. Moeller ,
H. Kausche ,
E. Guenzel ,
W. Juergens  and
W. Stetter
M. Moeller
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
H. Kausche
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
E. Guenzel
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
W. Juergens
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
W. Stetter
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
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Abstract

pin cells with the light entering the n-layer (pinITO) or the p-layer (SnO2p(C)in) were prepared taking into account the ‘basic’ boron profile in the i-layer. Their efficiencies (up to 7.4% and 10.1%) show a light-induced degradation. This can be removed by doping the i-layer of pinITO cells with a decreasing boron profile. The initial efficiency is only slightly affected. Cells containing fluorine due to prior plasma-etching require higher amounts of boron for stability. For the cell type SnO2p(C)in, phosphorus profiles, however increasing towards the n-layer, lead to reduced cell degradation without affecting the efficiency. The results of profiling were interpreted in terms of a recombination model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 325
Copyright
Copyright © Materials Research Society 1985

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References

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