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Enhanced Interdiffusion Effects in Compound Semiconductors

Published online by Cambridge University Press:  26 February 2011

P. M. Petroff
P. M. Petroff*
Affiliation:
Department of Materials and Department of Electrical and Computer Engineering. University of California. Santa Barbara, CA 93106
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Abstract

This paper reviews the principal processes involved in the enhanced interdiffusion of elements across interfaces between two III-V compound semiconductors. Implantation enhanced interdiffusion effects in GaAs-Gal−xAlxAs are compared for single Quantum Well structures and Superlattice structures. Measurements indicate a marked difference in the annealing and enhanced interdiffusion kinetics between these 2 types of structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 595
Copyright
Copyright © Materials Research Society 1988

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References

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