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Energy-Dependent Photoemission in the Study of Silicon-d Metal Interfaces

Published online by Cambridge University Press:  15 February 2011

L. Braicovich
L. Braicovich*
Affiliation:
Istituto di Fisica del Politecnico Milano, Milan 20133, (Italy)
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Abstract

New results are presented on the dependence on energy hv of the photoemission cross sections from d states of d atoms interacting with silicon (Si-Pd and Si-Ag). It is shown that the Cooper minimum is influenced by the atomic environment and that the Cooper effect is more pronounced when the interaction between the d atom and silicon becomes weaker. This approach together with an analysis of the shape of photoelectron spectra at the Cooper minimum is used in a discussion of the electron states in the reacted region of Si-Pd and Si-Mo interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 327
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1 Rubloff, G. W., Proc. Symp. on Semiconductor Surfaces and Interfaces, Trieste, September 1982, in Surf. Sci., to be published.Google Scholar
2 Braicovich, L., Garner, C. M., Skeath, P. R., Su, C. Y., Chye, P. W., Lindau, I. and Spicer, W. E., Phys. Rev. B, 20 (1979) 5131.Google Scholar
3 Bisi, O., Calandra, C., Braicovich, L., Abbati, I., Rossi, G., Lindau, I. and Spicer, W. E., J. Phys. C, 15 (1982) 4707.Google Scholar
4 Rossi, G., Abbati, I., Lindau, I. and Spicer, W. E., Appl. Surf. Sci., 11–12 (1982) 348.Google Scholar
5 Grunthaner, P. J., Grunthaner, F. J. and Madhukar, A., 16th Int. Conf. on Physics of Semiconductors, Montpellier, September 6–10, 1982.Google Scholar
6 Freeouf, J. L., Rubloff, G. W., Ho, P. S. and Kuan, T. S., Phys. Rev. Lett., 43 (1979) 1836.CrossRefGoogle Scholar
7 Rubloff, G. W., Ho, P. S., Freeouf, J. F. and Lewis, J. E., Phys. Rev. B, 23 (1981) 4183.Google Scholar
8 Rossi, G., Abbati, I., Braicovich, L., Lindau, I. and Spicer, W. E., Solid State Commun., 39 (1981) 195.Google Scholar
9 Rossi, G., Abbati, I., Braicovich, L., Lindau, I. and Spicer, W. E., Phys. Rev. B, 25 (1982) 3627.Google Scholar
10 Ho, P. S., Schmidt, P. E. and Föll, H., Phys. Rev. Lett., 46 (1981) 782.CrossRefGoogle Scholar
11 Franciosi, A., Peterman, D. J., Weaver, J. H. and Moruzzi, V. L., Phys. Rev. B, 25 (1982) 4981.Google Scholar
12 Cooper, J. W., Phys. Rev., 128 (1962) 681.Google Scholar
13 Lahiri, J. and Manson, S. T., Phys. Rev. Lett., 48 (1982) 614.Google Scholar
14 Franciosi, A., Symp. on Semiconductors, Surfaces and Interfaces, Trieste, September 1982.Google Scholar
15 Ho, P. S., Rubloff, G. W., Lewis, J. E., Moruzzi, V. L. and Williams, A. R., Phys. Rev. B, 22 (1980) 4784.Google Scholar
16 Bisi, O. and Calandra, C., J. Phys. C, 14 (1981) 5479.Google Scholar
17 Rossi, G., Abbati, I., Braicovich, L. and Lindau, I., to be published.Google Scholar
18 Rossi, G., Abbati, I., Braicovich, L., del Pennino, U., Nannarone, S., Hecht, M. H. and Lindau, I., to be published.Google Scholar
19 Goldberg, S. M., Fadley, C. S. and Kono, S., J. Electron Spectrosc. Relat. Phenom., 21 (1981) 285.Google Scholar
20 Johansson, L. I., Lindau, I., Hecht, M. H., Goldberg, S. M. and Fadley, C. S., Phys. Rev. B, 20 (1979) 4126.CrossRefGoogle Scholar
21 Kennedy, D. J. and Manson, S. T., Phys. Rev. A, 5 (1972) 227.Google Scholar
22 Tromp, R., van Loenen, E. J., Iwami, M., Smeenk, R. and Saris, F. W., Thin Solid Films, 93 (1982) 151.Google Scholar
23 Rossi, G., Abbati, I., Braicovich, L., Lindau, I. and Spicer, W. E., J. Vac. Sci. Technol., 21 (1982) 617.Google Scholar
24 Rossi, G., Abbati, I., Braicovich, L., Lindau, I., Spicer, W. E., del Pennino, U. and Nannarone, S., 16th Int. Conf. on Physics of Semiconductors, Montpellier, September 6–10, 1982.Google Scholar
25 Franciosi, A., Weaver, J. H., O'Neill, D. G., Chabal, Y., Rowe, J. E., Poate, J. M., Bisi, O. and Calandra, C., J. Vac. Sci. Technol., 21 (1982) 624.Google Scholar