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Emissivity-Independent Rapid Thermal Processing using Radiation Shields

Published online by Cambridge University Press:  10 February 2011

P. J. Timans ,
R. N. Morishige  and
Y. Wasserman
P. J. Timans
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134–2300.
R. N. Morishige
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134–2300.
Y. Wasserman
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134–2300.
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Abstract

Simple rapid thermal processing (RTP) system configurations, in which the wafer temperature is controlled by a pyrometer viewing the wafer's backside, are vulnerable to changes in the spectral emissivity of this surface. One method for emissivity-independent temperature control is to use an opaque plate beneath the wafer as a radiation shield, which masks the wafer's backside from the heating lamps and provides a target whose temperature can be monitored easily by a pyrometer or a thermocouple. Experimental studies of the dynamic temperature responses of the wafer and the shield are in good agreement with predictions from a theoretical model based on a simple analysis of radiation heat transfer in the system. For the set of wafers studied here, pyrometer control of the shield temperature gave a spread of wafer temperatures of 4°C, as compared to a range of 160°C when the shield was not used. The radiation shield was also shown to give RTP process results which are immune to changes in wafer backside coatings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 57
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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