Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-05T15:16:17.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Trap Defects in Y2O3:Eu and (Y,Gd)2O3:Eu X-Ray Scintillators

Published online by Cambridge University Press:  21 February 2011

Steven J. Duclos ,
Charles D. Greskovich  and
Chester R. O'clair
Steven J. Duclos
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY.
Charles D. Greskovich
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY.
Chester R. O'clair
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY.
Get access

Abstract

Detailed properties of the defects and energy transfers responsible for afterglow in transparent sintered ceramic Y2O3:Eu and (Y,Gd)2O3:Eu based scintillators have been determined by transient thermoluminescence ('TL) and spectral measurements of afterglow emission. X-ray excited TTL spectra between 150 K and 350 K reveal 4 defect transitions for 3 mole percent Eu. Adequate modeling of this data requires for each defect transition a trap depth energy, an attempt-to-escape frequency, a broadened density of trap state energies, and a trap filling frequency. These defect parameters have been determined and can be used to predict afterglow dependence on time after excitation shut-off, exposure time, and temperature. The afterglow emission spectra at all temperatures are characteristic of Eu under S6 site-selective UV excitation of these rare-earth C-type structure scintillators. This indicates that states associated with the Eu activator on the S6 site are the terminal states upon thermal release of trapped charge carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 348 , 1994 , 503
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Peters, T.E., Pappalardo, R.G. and Hunt, R.B., in Solid State Luminescence: Theory, Materials. and Devices (Chapman and Hall, London, 1993), p.313.Google Scholar
2. Greskovich, C., Cusano, D., Hoffman, D. and Riedner, R., Am. Ceram. Soc. Bull. 71, 1120 (1992).Google Scholar
3. Kostler, W., Bayer, E., Rossner, W. and Grabmaier, B.C., Nuc. Tracks Radiat. Meas. 21, 135 (1993).10.1016/1359-0189(93)90063-FGoogle Scholar
4. Nakazawa, Eiichiro, Jap. J. App. Phys. 23, L755 (1984).Google Scholar
5. Dumbleton, J.H. and Lomer, T.R., Acta Cryst. 19, 307 (1965).Google Scholar
6. Forest, H. and Ban, G., J. of Electrochem. Soc. 116, 474 (1969).Google Scholar
7. Medlin, W.L., Phys. Rev. 123, 502 (1961).Google Scholar
8. Rennie, J., Nakazawa, E., and Koda, T., Jap. J. of App. Phys. 29, 509 (1990).Google Scholar
9. Herber, J., Hellwege, K.H., Kobler, V. and Murmann, H., Z. Physik 237, 189 (1970)10.1007/BF01398633Google Scholar
10. Merz, J.L. and Pershan, P.S., Phys. Rev. 162, 235 (1967).Google Scholar
11. Fonger, W.H. and Struck, C.W., J. Electrochem. Soc. 118, 273 (1971).Google Scholar
12. Meijerink, A. and Blasse, G., J. Lumin. 43, 283 (1989)10.1016/0022-2313(89)90098-7Google Scholar