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Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

Published online by Cambridge University Press:  31 March 2011

Shinichi Tanabe ,
Yoshiaki Sekine ,
Hiroyuki Kageshima ,
Masao Nagase  and
Hiroki Hibino
Shinichi Tanabe
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Yoshiaki Sekine
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Hiroyuki Kageshima
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Masao Nagase
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Hiroki Hibino
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Abstract

We studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC. The half-integer quantum Hall effect under the gated environment was observed in monolayer graphene devices. The mobility of the monolayer and bilayer graphene devices showed distinct characteristics as a function of carrier density, which reflect their electronic structures. Strong temperature dependence at the charge neutrality point was observed in bilayer graphene devices, suggesting band gap opening.

Keywords

Hall effectelectronic materialelectrical properties

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1283: Symposium B – Carbon-Based Electronic Devices—Processing, Performance and Reliability , 2011 , mrsf10-1283-b09-02
Copyright
Copyright © Materials Research Society 2011

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References

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