Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-28T23:44:19.512Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Structures for (Si)m (GaP)n Superlattices

Published online by Cambridge University Press:  22 February 2011

P. J. Lin-Chung
P. J. Lin-Chung*
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375–5000
Get access

Abstract

This paper reports on a tight-binding calculation of the band structures of the Si-GaP superlattice (SL) systems with emphasis on the results of the band gap properties. This calculation finds that the SLs grown onto the [110] or [111] oriented substrate do not produce direct gap materials. On the other hand, some of the [001] oriented SLs become direct gap materials when either an interface (IF) state is created at the P and Si IF, or a confined state in the Si occurs with only Ga and Si atoms forming all the IF.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 589
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schulman, J. N. and McGill, T. C., Phys. Rev. B19, 1680 (1977)Google Scholar
2. Krishnamurthy, S. and Moriarty, J.A., Phys. Rev. B32, 1027 (1985) and the references quoted there.CrossRefGoogle Scholar
3. Caruthers, E. and Lin-Chung, P.J., Phys. Rev. B17, 2705 (1978).CrossRefGoogle Scholar
4. Gell, M. A., Ninno, D., Jaros, M. and Herbert, D. C., Phys. Rev. B34, 2416 (1986) and the references quoted there.Google Scholar
5. Sanders, G. D. and Chang, Y. C., Phys. Rev. B32, 5517 (1985)CrossRefGoogle Scholar
6. Smith, D. L. and Mailhiot, C., Phys. Rev. B33, 8360 (1986) and the references quoted there.Google Scholar
7. Li, Y. and Lin-Chung, P. J., Phys. Rev. B27, 3465 (1983)CrossRefGoogle Scholar
8. Li, Y. and Lin-Chung, P. J., J. Phys. Chem. Solids, 46, 241 (1985).Google Scholar
9. See, for instance, Capasso, F. and Margaritondo, G., “Hetero-junction band discontinuities: Physics and device applications” (Elsevier Science Publishing Co. New York, 1987), p.74 Google Scholar
10. Harrison, W. A., J. Vac. Sc. Tech. 14, 1016 (1977).Google Scholar
11. Madhukar, A. and Delgado, J., Solid State Commun. 14, 199 (1981).Google Scholar
12. Froyen, S., Wood, D.M. and Zunger, A., Appl. Phys. Lett. 54, 2435 (1989).CrossRefGoogle Scholar
13. Bass, J. M. and Matthai, C.C., J. Phys. Condens. Matter, 2, 7841 (1990).Google Scholar