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Electronic Properties of OMVPE Grown films of YBa2Cu3O7-δ on 1” LaAlO3 Substrates

Published online by Cambridge University Press:  25 February 2011

William S. Rees Jr ,
Yusuf S. Hascicek  and
Louis R. Testardi
William S. Rees Jr
Affiliation:
Department of Chemistry, Florida State University, Tallahassee, FL, 32306–3006. Department of Materials Research and Technology Center, Florida State University, Tallahassee, FL, 32306–3006.
Yusuf S. Hascicek
Affiliation:
Department of Physics, Florida State University, Tallahassee, FL, 32306–3006. Department of Materials Research and Technology Center, Florida State University, Tallahassee, FL, 32306–3006.
Louis R. Testardi
Affiliation:
Department of Physics, Florida State University, Tallahassee, FL, 32306–3006. Department of Materials Research and Technology Center, Florida State University, Tallahassee, FL, 32306–3006.
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Abstract

Films of YBa2CU3O7-δ have been grown on 1” LaAlO3 by OMVPE utilizing M(tmhd)n (M = Ba, Cu: n = 2; M = Y: n = 3; tmhd = 2,2,6,6-tetramethylheptane-3,5-dionato) as the source materials in a cold wall, vertical rotating disk reactor. The resultant films were characterized by SEM, XRD, Tc, Jc, and surface profilometry measurements. Relative to laser ablated thin films, the surface morphology was determined to be virtually featureless. In-situ depositions at substrate temperatures of <700°C, employing nitrous oxide as the oxidizing reagent, produced annular irregularities in the electronic properties of these films. The highest quality was observed near the film's center, with a marked decay evident toward the exterior 7 mm perimeter of the coated wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 271: Symposium N – Better Ceramics Through Chemistry V , 1992 , 925
Copyright
Copyright © Materials Research Society 1992

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References

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