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Electronic Properties of Bi and In Substituted Layered Ba4Pb3O10 Compounds

Published online by Cambridge University Press:  16 February 2011

R. Kasal ,
J. B. Ulanday ,
J. Obien  and
B. Jayaram
R. Kasal
Affiliation:
Materials Science Program, Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266
J. B. Ulanday
Affiliation:
Materials Science Program, Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266
J. Obien
Affiliation:
Materials Science Program, Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266
B. Jayaram
Affiliation:
Materials Science Program, Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266
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Abstract

Electronic properties of the layered compounds with the general composition Ban+1(Pb,Bi)nO3n+1 are quite interesting as the crystal structure of these materials is quite similar to that of high-Tc cuprates. We have investigated the effect of Bi and In substitution on the structure, oxygen stoichiometry (carrier concentration) and the electronic properties of Ba4Pb3O10 compounds. The X-ray powder diffraction results indicate that the unit cell symmetry changes from body-centered tetragonal to cubic with the increasing concentration (x) of Bi and In. The oxygen stoichiometry of the materials is found to increase monotonically with the increase in x(Bi). On the other hand it decreased almost linearly with the increasing x(In). Resistivity of the materials is measured as a function of temperature in the temperature region 3-300K. It is found that the room temeprature resistivity increases with increasing x(Bi/In). Since the oxygen stoichiometry values suggest an increase in the carrier concentration with increasing x(Bi/In), it appears that the disorder caused by the substitution at the Pb site has lead to the carrier localization. For x(Bi)<0.2, we found that the resistivity varies as a function of lnT, which is indicative of weak localization. However, at higher concentrations 3D-VRH behavior is observed. On the other hand the resistivity of indium substituted samples show M-I transition, at low concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 547: Symposium DD – Solid-State Chemistry of Inorganic Materials II , 1998 , 291
Copyright
Copyright © Materials Research Society 1999

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