Hostname: page-component-54dcc4c588-sq2k7 Total loading time: 0 Render date: 2025-09-11T14:37:28.921Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Spin Resonance Studies of Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

David K. Biegelsen
David K. Biegelsen*
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
Get access

Abstract

Electron spin resonance and related spin dependent measurements have been used to make key contributions to the understanding of amorphous silicon, specifically as probes of the dominant states in the gap, recombination processes and doping. In this paper we give a cursory description of the techniques as they apply to this problem. We then review what has been learned in a-Si:H usually from coupled results of spin resonance and other complementary experimental techniques. The results lead us to a surprisingly simple picture of the equilibrium and non-equilibrium behavior of defects and carriers in this prototypical amorphous semiconductor.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Brodsky, M. H. and Title, R. S., Phys. Rev. Lett. 23, 581 (1969).CrossRefGoogle Scholar
2. Spear, W. and LeComber, P. G., Solid State Comm. 17, 9 (1975).Google Scholar
3. Brower, K. (this conference proceedings).Google Scholar
4. Movaghar, B., Schweitzer, L. and Overhof, H., Phil. Mag. B, 37 683 (1978).Google Scholar
5. Thomas, P. A. and Kaplan, D., in Lucovsky, G. and Galeener, F. L. (eds.) Structure and Excitations of Amorphous Solids, AIP, New York, 1976, p. 85;Google Scholar
Bachus, R., Movaghar, B., Schweitzer, L. and Voget-Grote, U., Phil. Mag. B. 39 27 (1979).Google Scholar
6. Mims, W. B. and Biegelsen, D. K. (unpublished).Google Scholar
7. Hasegawa, S. and Yazaki, S., Thin Solid Films, 55 15 (1978); andGoogle Scholar
Biegelsen, D. K. (unpublished).Google Scholar
8. Voget-Grote, U., Thesis, Marburg, 1977 (unpublished).Google Scholar
9. Movaghar, B. and Schweitzer, L., Phys. Stat. Sol. (b), 80 491 (1977);CrossRefGoogle Scholar
Connell, G. A. N. and Pawlik, J. R., Phys. Rev. B, 13 787 (1976).Google Scholar
10. Knights, J. C. and Lujan, R. A., Appl. Phys. Lett., 35 244 (1979).Google Scholar
11. Caplan, P. J., Poindexter, E. H., Deal, B. E. and Razouk, R. R., J. Appl. Phys., 50 5847 (1979).Google Scholar
12. Griscom, D. L., Phys. Rev. B, 20 1823 (1979); andGoogle Scholar
Griscom, D. L. (in this conference proceedings).Google Scholar
13. Street, R. A., Knights, J. C. and Biegelsen, D. K., Phys. Rev. B, 18 1880 (1978).CrossRefGoogle Scholar
14. Street, R. A., Biegelsen, D. K. and Stuke, J., Phil. Mag. B, 40 451 (1979).Google Scholar
15. Hasegawa, S., Kasajima, T., and Shimizu, T., Phil. Mag. 8 (in press).Google Scholar
16. Stuke, J., in Spear, W. (ed.), Proc. 7th Intl. Conf on Amorphous and Liquid Semiconductors, U. of Edinburgh, Edinburgh, 1977, p. 406;Google Scholar
Hasegawa, S., Kasajima, T. and Shimizu, T., Sol. State Comm., 29 13 (1979).Google Scholar
17. Knights, J. C., Biegelsen, D. K. and Solomon, I., Sol. State Comm., 22 133 (1977);Google Scholar
Pawlik, J. R. and Paul, W., in Spear, W. E. (ed.), Proc. 7th Intl. Conf. on Amorphous and Liquid Semiconductors, U. of Edinburgh, Edinburgh, 1977, p. 437;Google Scholar
Friederich, A., Kaplan, D. and Sol, N., J. Elec. Materials, 1979 (to be published).Google Scholar
18. Biegelsen, D. K. and Knights, J. C., in Spear, W. E. (ed.), Proc. 7th Intl. Conf. on Amorphous and Liquid Semiconductors, U. of Edinburgh, Edinburgh, 1977, p. 429.Google Scholar
19. Street, R. A. and Biegelsen, D. K., Solid State Comm. 33, 1159 (1980).Google Scholar
20. Street, R. A., Phys. Rev. B, 21, 5775 (1980); and references cited therein.Google Scholar
21. Biegelsen, D. K., Knights, J. C., Street, R. A., Tsang, C. and White, R. M., Phil. Mag. B, 37 477 (1978);Google Scholar
Morigaki, K., Dunstan, D. J., Cavenett, B. C., Dawson, P. and Nicholls, J. E., Sol. State Comm., 26 981 (1978).CrossRefGoogle Scholar
22. Solomon, I., Biegelsen, D. K. and Knights, J. C., Sol. State Comm., 22 505 (1977).Google Scholar
23. Kaplan, D., Solomon, I., and Mott, N. F., J. de Physique-Lettres 39, L51 (1978).CrossRefGoogle Scholar
24. Kerns, R. and Biegelsen, D. K. (unpublished).Google Scholar
25. Solomon, I., Sol. State Comm., 20 215 (1976)Google Scholar