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Electron and Ion Beam-Enhanced Adhesion

Published online by Cambridge University Press:  22 February 2011

I.V. Mitchell ,
J.S. Williams ,
D.K. Sood ,
K.T. Short ,
S. Johnson  and
R.G. Elliman
I.V. Mitchell
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
J.S. Williams
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
D.K. Sood
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
K.T. Short
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
S. Johnson
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
R.G. Elliman
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia Joint appointment with Chemical Physics Division, CSIRO, Clayton 3168, Australia.
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Abstract

Helium ions of 2 MeV energy and electrons of 5 to 30 keV energy have been used to irradiate a variety of thin (10–330 nm) metal films after deposition on semiconductor and insulator substrates. Dose thresholds for increased adhesion were found following irradiation with either type of particle. It is argued that the stronger bonding arises from an electronic, rather than a collisional, process. Representative results are presented and discussed within the framework of a recent model for heavy ion-induced effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 189
Copyright
Copyright © Materials Research Society 1984

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References

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