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Electron and Hole Transport Perpendicular to the Planes of a-Si:H/ a-Si, Ge:H Compositional Superlattices

Published online by Cambridge University Press:  28 February 2011

J. Kolodzey ,
S. Aljishi ,
R. Schwarz ,
D.-S. Shen ,
S. Quinlan ,
S. A. Lyon  and
S. Wagner
J. Kolodzey
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
S. Aljishi
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
D.-S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
S. Quinlan
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
S. A. Lyon
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544.
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Abstract

Drift mobilities, drift mobility-lifetime products and minority carrier diffusion lengths perpendicular to the planes of a-Si:H, F/a-Si0.35,Ge0.65:H, F superlattices have been measured over a range of well sublayer widths. The transport data suggest a transition from scattering dominated transport in states at the top of the barriers for short superlattice periods to recombination dominated transport at the bottom of the wells for large periods. The characteristic period for this transition is ˜3 nm.

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References

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