Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-02T18:39:36.204Z Has data issue: false hasContentIssue false
  • English
  • Français

Electromigration Lifetime and Step Coverage in Al/Cu/Si Thin Film Conductors

Published online by Cambridge University Press:  15 February 2011

Larisa Kisselgof ,
L. J. Elliott ,
J. J. Maziarz  and
J. R. Lloyd
Larisa Kisselgof
Affiliation:
Digital Equipment Corporation 77 Reed Road Hudson MA 01749-2895
L. J. Elliott
Affiliation:
Digital Equipment Corporation 77 Reed Road Hudson MA 01749-2895
J. J. Maziarz
Affiliation:
Digital Equipment Corporation 77 Reed Road Hudson MA 01749-2895
J. R. Lloyd
Affiliation:
Digital Equipment Corporation 77 Reed Road Hudson MA 01749-2895
Get access

Abstract

Electromigration-induced failure was investigated in Al/Cu/Si conductor stripes deposited over trenches cut into an oxide layer and compared with those deposited onto flat areas. The results indicate a reduction in lifetime which is proportional to the size of the step to be covered and this reduction is in excess of what is expected from simple current density scaling. In addition, the electromigration performance of conductors deposited over topology did not correlate well with the performance on flat structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 107
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Kemeny, A.P., Kalmar, G. and Stefanlay, V., Microelectron. Reliab. 14, 499, (1975)Google Scholar
2) Danso, K.A. and Tullos, L., Microelectron. Reliab., 21, 513, (1981)Google Scholar
3) Richards, B.P. and Footner, P.K., GEC J. of Research, 2, 157 (1984)Google Scholar
4) Levine, E. and Kitcher, J., Proc. 22nd Ann. Int. Reliab. Phys. Symp., IEEE, 242 (1984)Google Scholar
5) Strausser, Y.E., Euzent, B.L., Smith, R.C., Tracy, B.M. and Wu, K., Proc. 25th Ann. Int. Reliab. Phys. Symp., IEEE, 140 (1987)Google Scholar
6) Wild, A. and Triantafyllou, M., Microelectron. Reliab., 28, 243 (1988)Google Scholar
7) Oates, A.S., Proc. 28th Ann. Int. Reliab. Phys. Symp., IEEE, 20, (1990)Google Scholar
8) Ghate, P.B., Proc. 20th Ann. Int. Reliab. Phys. Symp. IEEE, 292 (1982)Google Scholar
9) Attardo, M.J. and Rosenberg, R., J. Appl. Phys., 41, 2381 (1970)Google Scholar
10) Cho, J. and Thompson, C.V., Appl. Phys. Lett., 54, 2577, (1989)Google Scholar
11) Smith, P.M., Lloyd, J.R. & Prokop, G.S., J. Vac. Sci. Technol. A2, 220, (1984)Google Scholar