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Electromigration in Cu/W Structure

Published online by Cambridge University Press:  15 February 2011

C-K. Hu ,
M. B. Small  and
P. S. Hoa
C-K. Hu
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
M. B. Small
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
P. S. Hoa
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Mass transport by electromigration in sputtered Cu line segments on a continuous W line has been measured using the drift velocity technique at temperatures from 166 to 396 °C. The Ta/Cu/Ta line segments are patterned by dry etching techniques. Cu mass depletion (voids) at the cathode end and accumulation (hillocks) at the anode were measured as a function of time from scanning electron microscope micrographs. The edge displacement of Cu was found to increase linearly with time. The activation energy for Cu electromigration drift velocity, which relates to the product of effective charge number and diffusivity, Z*D, is found to be 0.6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 171
Copyright
Copyright © Materials Research Society 1992

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References

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