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Electromigration Failure and Mechanical Stress in thin Film Conductors

Published online by Cambridge University Press:  22 February 2011

J. R. Lloyd*
Affiliation:
Digital Equipment Corporation, 77 Reed Road, Hudson MA, U.S.A. and Max-Planck-Institut fur Metallforschung, Institut fur Werkstoff wissenschaft, Seestrasse 92, D-7000 Stuttgart, Germany.
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Abstract

The role of mechanical stress in electromigration of thin films is reviewed and discussed. The role of stress in the driving force and the diffusivity are seen both to be important. The concept of the activation volume is discussed with regard to information available from its measurement. It is seen that void nucleation by electromigration or stress voiding is an unsolved theoretical problem.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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