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Electromigration Damage by Current Induced Coalescence of Thermal Stress Voids

Published online by Cambridge University Press:  22 February 2011

P. Børgesen ,
M. A. Korhonen ,
T. D. Sullivan ,
D. D. Brown  and
C.-Y. Li
P. Børgesen
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, 14853, NY
M. A. Korhonen
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, 14853, NY
T. D. Sullivan
Affiliation:
IBM General Technology Division, Essex Junction, Vermont 05452
D. D. Brown
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, 14853, NY
C.-Y. Li
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, 14853, NY
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Abstract

According to a new electromigration model, small thermal stress induced voids remain trapped at grain and phase boundaries, growing under an electric current. When they reach a ‘threshold’ size, migration and coalescence leads to rapid line failure. Predictions are compared to experimental results for Al, Al(0.6%Si), and Al(1.6%Cu) lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 683
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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