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Electromigration Behavior of Aluminum Films Deposited by Partially Ionized Beam.

Published online by Cambridge University Press:  22 February 2011

O. V. Kononenko ,
L. K. Fionova  and
V. N. Matveev
O. V. Kononenko
Affiliation:
Institute of Microelectronics Technology and High Purity Materials of the USSR Academy of Sciences, 142432 Chernogolovka, Moscow district, USSR.
L. K. Fionova
Affiliation:
Institute of Microelectronics Technology and High Purity Materials of the USSR Academy of Sciences, 142432 Chernogolovka, Moscow district, USSR.
V. N. Matveev
Affiliation:
Institute of Microelectronics Technology and High Purity Materials of the USSR Academy of Sciences, 142432 Chernogolovka, Moscow district, USSR.
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Abstract

Aluminum films deposited by partially»ionized beam were stressed by a current density of 2×106 A/cm2 at a temperature of 300°C. The films prepared at the acceleration voltage of 5 kV lived over 200 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 713
Copyright
Copyright © Materials Research Society 1992

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References

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