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Electroluminescence And Photoluminescence Studies Of A Nitride-Rich GaN1-XPx SQW Structure LED Grown By Laser-Assisted Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

Junjiroh Kikawa ,
Seikoh Yoshida  and
Yoshiteru Itoh
Junjiroh Kikawa
Affiliation:
Fitel Phtonics Laboratory, The Furukawa Electric Co., Ltd., 8, Yawatakaigan-dori, Ichihara, Chiba, 290-5555, Japan
Seikoh Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Yoshiteru Itoh
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
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Abstract

We fabricated a light-emitting diode (LED) having a nitride-rich GaN1-xPx single quantum well (SQW) structure grown using laser-assisted metal-organic chemical vapor deposition (LA-MOCVD). The peak energy of the electroluminescence (EL) of the LED was 2.88 eV, which is in the vicinity of the energy due to the recombination of the bounding exciton by P atoms, known as an isoelectronic trap in GaN. We observed a blue shift of this peak by increasing the drive current. We also observed extra emission of band-to-band recombination at about 3.4 eV above a drive current of 32 mA, where the external quantum efficiency was already saturated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.44.1
Copyright
Copyright © Materials Research Society 2002

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