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Electrode Materials for Ferroelectric Capacitors: Properties of Reactive DC Sputtered IrO2 Thin Films

Published online by Cambridge University Press:  10 February 2011

Venkatasubramani Balu ,
Tung-Sheng Chen ,
Bo Jiang ,
Shao-Hong Kuah ,
Jack C. Lee ,
Peir Chu ,
Robert E. Jones ,
Peter Zurcher ,
Deborah J. Taylor  and
Sherry Gillespie
Venkatasubramani Balu
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712.
Tung-Sheng Chen
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712.
Bo Jiang
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712.
Shao-Hong Kuah
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712.
Jack C. Lee
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712.
Peir Chu
Affiliation:
Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc. MD K1, Ed Bluestein Blvd., Austin, Texas 78721.
Robert E. Jones
Affiliation:
Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc. MD K1, Ed Bluestein Blvd., Austin, Texas 78721.
Peter Zurcher
Affiliation:
Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc. MD K1, Ed Bluestein Blvd., Austin, Texas 78721.
Deborah J. Taylor
Affiliation:
Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc. MD K1, Ed Bluestein Blvd., Austin, Texas 78721.
Sherry Gillespie
Affiliation:
Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc. MD K1, Ed Bluestein Blvd., Austin, Texas 78721.
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Abstract

Due to its low resistivity and excellent thermal stability, IrO2 has attracted attention as an alternative for electrode material in ferroelectric integrated circuit applications. In this work, IrO2 films deposited using reactive DC magnetron sputtering were studied. Film properties such as resistivity, crystallinity and morphology were examined as a function of deposition condition. Optimum process parameters to obtain high quality IrO2 thin films are suggested.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 139
Copyright
Copyright © Materials Research Society 1996

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References

1. Araujo, C. A. Paz de, Cuchiaro, J. D., Scott, M. C. and McMillan, L. D., International Patent Publication No. WO 93/12542 (June 24, 1993).Google Scholar
2. Sreenivas, K., Reaney, Ian, Maeder, T., Setter, N., Jagdish, C., and Elliman, R. G., J. Appl. Phys. 75 (1), 232 (1994).Google Scholar
3. Rao, C. N. R. and Rao, G. V. Subba, Transition Metal Oxides, ( National Standard Reference Data System, National Bureau of Standards 49, June 1974), p. 103 and p. 127.Google Scholar
4. Bernstein, S. D., Wong, T. Y., Kisler, Yanina and Tustison, R. W., J. Mater. Res. 8, 12 (1993).Google Scholar
5. Maiwa, Hiroshi, Ichinose, Noboru and Okazaki, Kiyoshi, Jpn. J. Appl. Phys. 33, 6227 (1994).Google Scholar
6. Al-Shareef, H. N., Auciello, O. and Kingon, A. I., J. Appl. Phys. 77 (5), 2146 (1995).Google Scholar
7. Saito, Shinji and Kuramasu, Keizaburo, Jpn. J. Appl. Phys. 31, 135 (1992).Google Scholar
8. Pan, Wei, Desu, S. B., Yoo, In K. and Vijay, Dilip P., J. Mater. Res. 9, 2976 (1994).Google Scholar
9. Nakamura, Takashi, Nakao, Yuichi, Kamisawa, Akira and Takasu, Hidemi, Jpn. J. Appl. Phys. 33, 5207 (1994).Google Scholar