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Electrochemical and Chemical Sulfidation of GaAs: A Surface Chemical Study

Published online by Cambridge University Press:  21 February 2011

J. Yota  and
V. A. Burrows
J. Yota
Affiliation:
Department of Chemical, Bio, and Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287–6006
V. A. Burrows
Affiliation:
Department of Chemical, Bio, and Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287–6006
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Abstract

Treatment of gallium arsenide with sulfur-containing media has been shown to improve GaAs surface electronic properties. However, there is still considerable controversy regarding the chemical nature of the surface film which results from the sulfidation, and of the basis of the electronic improvement and of the decay in the improved electronic properties with time. We have investigated the surface chemistry of the chemical sulfidation treatment of GaAs with Na2S-9H2O and the electrochemical sulfidation treatment of GaAs with Na2S-9H2O-ethylene glycol. Using surface infrared spectroscopy (SIRS), we have studied the film formed on the surface after the treatments and its behavior with time. Results show that the film on the GaAs surface contains sulfur which is often associated with oxygen, that this film slowly reacts in air to form unexpected species, e.g. sodium carbonate and sulfur-oxygen group-containing compounds, and that sulfur and oxygen are non-uniformly distributed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 329
Copyright
Copyright © Materials Research Society 1992

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References

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