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Electrical Transport Studies of the Hydrogen-Related Compensating Donor in B-Doped Silicon Diodes

Published online by Cambridge University Press:  28 February 2011

A. J. Tavendale ,
A. A. Williams ,
D. Alexiev  and
S. J. Pearton
A. J. Tavendale
Affiliation:
Australian Atomic Energy Commission, Lucas Heights Research Laboratories PMB, Sutherland, NSW 2232, Australia
A. A. Williams
Affiliation:
Australian Atomic Energy Commission, Lucas Heights Research Laboratories PMB, Sutherland, NSW 2232, Australia
D. Alexiev
Affiliation:
Australian Atomic Energy Commission, Lucas Heights Research Laboratories PMB, Sutherland, NSW 2232, Australia
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA
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Abstract

Transport of the hydrogen-related, acceptor-compensating defect has been observed in reverse-bias annealed Al-gate Schottky and n+-P diodes from hydrogenated, B-doped p-Si. Secondary ion mass spectroscopy (SIMS) profiling (deuterium substitution) confirmed field-aided migration. Significant differences in field transport (and thermal diffusion) between diodes from Hand D-treated p-Si(B) qualitatively indicates a monatomic species. The effect is interpreted as field drift of a positively charged species, possibly H+, with a donor charge state in the upper-half band gap, in conflict with long-held theory predicting very deep level activity. Acceptor compensation is unstable under minority (electron) carrier injection by forward bias or illumination at 25°C, supporting the acceptor-protonic trap pair model (A-H+) of Sah, Pan and Hsu [J. Appl. Phys. 57, 5148 (1985)].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 469
Copyright
Copyright © Materials Research Society 1986

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References

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