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Electrical Properties of ZnO-Bi2O3 Metal Oxide Heterojunction — A Clue of a Role of Intergranular Layers in ZnO Varistors

Published online by Cambridge University Press:  15 February 2011

Kazuo Eda
Kazuo Eda*
Affiliation:
Wireless Research Laboratory, Matsushita Electric Industrial Co., Ltd., Kadoma Osaka 571, Japan
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Abstract

Zinc Oxide (ZnO) Ceramics-Bismuth Oxide (Bi2O3) Metal Oxide thin film heterojunction made by sputtering technique showed a highly non-Ohmic property. The voltage-current characteristics and the dielectric properties showed dependence on Bi2O3 metal oxide thin film thickness.

In this paper after reviewing and discussing the electrical properties of ZnO varistors, the role of intergranular layers in the ZnO varistor is discussed based on experimental results with the heterojunction.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 381
Copyright
Copyright © Materials Research Society 1982

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References

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