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Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Temperature Range

Published online by Cambridge University Press:  21 February 2011

Joachim Zeller ,
Petr G. Eliseev ,
Philippe Sartori ,
Piotr Perlin  and
Marek Osiński
Joachim Zeller
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131-6081
Petr G. Eliseev
Affiliation:
On leave from P. N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow, Russia
Philippe Sartori
Affiliation:
On leave from Ecole Nationale Supérieure des Télécommunications, Paris, France
Piotr Perlin
Affiliation:
On leave from High Pressure Research Center, Warsaw, Poland
Marek Osiński
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131-6081
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Abstract

Studies of electrical characteristics of nitride-based light emitting diodes (LEDs) are of interest as they can shed light on carrier transport across the p-n heterojunction. In addition, they provide a convenient way of investigating degradation processes associated with high electrical stress. We present electrical characteristics of Nichia NLPB500 blue LEDs based on AlGaN/InGaN/GaN material system in the temperature range of 9-340 K. Two components of current are identified. High-density current stress leads to diode degradation by shunt formation caused by metal electromigration. At 8 K, blue emission was observed at currents as small as 20 nA.

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References

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