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Electrical Properties of AuZnCr Multilayer Metallizations to InP

Published online by Cambridge University Press:  25 February 2011

Thomas clausen  and
Otto leistiko
Thomas clausen
Affiliation:
Physics Department, Technical University of Denmark, Bldg. 309, DK-2800 Lyngby, Denmark.
Otto leistiko
Affiliation:
Mikroelektronik Centret, Technical University of Denmark, Bldg. 345E, DK-2800 Lyngby, Denmark.
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Abstract

The electrical properties of a Au/Cr/(Au)/Zn/Au (50/25/(50)/100/2 nm) multilayer metallization to n- and p-type InP have been investigated. The results consistently show that it is possible to modulate the effective Schottky barrier height of the metal-semiconductor contact over a large range of values extending from ∼0 eV for contacts to p-type InP to values close to the bandgap of the InP (∼1.3 eV) for contacts to n-type InP. The limiting factor in the developement of the highest quality metal-semiconductor diodes to n-type InP with very high Schottky barrier heights is found to be diffusion of Au elements at high annealing temperatures above 500°C, as determined from I-V, C-V and DLTS plots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 363
Copyright
Copyright © Materials Research Society 1994

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References

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