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Electrical Properties of Amorphous Thin Films of Ferroelectric Oxides Prepared by Sol-Gel Technique

Published online by Cambridge University Press:  21 February 2011

Yuhuan Xu ,
Ren Xu ,
Chih-Hsing Cheng  and
John D. Mackenzie
Yuhuan Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024, USA
Chih-Hsing Cheng
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024, USA
John D. Mackenzie
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024, USA
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Abstract

Amorphous thin films of ferroelectric oxides including lead zirconate titanate (PZT), barium titanate (BaTiO3) and lithium niobate (LiNbO3) on several kinds of substrates were prepared by a sol-gel technique. The heat-treatment temperatures for preparation of amorphous thin films were much lower than those for the corresponding crystalline ferroelectric thin films. Electrical properties of these amorphous thin films were measured and compared with those of corresponding crystalline films. These amorphous thin films exhibited ferroelectric-like behavior. A model of the microstructure of these films is proposed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 441
Copyright
Copyright © Materials Research Society 1993

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