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Electrical Characterization of Magnesium-Doped Gallium Nitride Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

J. W. Huang ,
H. Lu ,
J. G. Cederberg ,
I. Bhat  and
T. F. Kuech
J. W. Huang
Affiliation:
Chemical Engineering Depaurtment, University of Wisconsin, Madison, WI 53706
H. Lu
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
J. G. Cederberg
Affiliation:
Chemical Engineering Depaurtment, University of Wisconsin, Madison, WI 53706
I. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
T. F. Kuech
Affiliation:
Chemical Engineering Depaurtment, University of Wisconsin, Madison, WI 53706
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Abstract

We have applied frequency-dependent capacitance measurements and admittance spectroscopy on metalorganic vapor phase epitaxy GaN:Mg to study the electronic states associated with Mg doping. Samples with different Mg doping levels were grown and annealed in nitrogen. Lateral dot-and-ring Schottky diodes using Au/Ti were fabricated. After a 800 °C anneal, frequency-dependent measurements show that the capacitance is reduced at a higher frequency, most likely due to the inability of a deep center to maintain an equilibrium ionization state under a high frequency modulation. The net ionized acceptor concentrations was found to be greater at a higher Mg doping level. Admittance spectroscopy, in which the conductance is monitored as a function of temperature, verifies the existence of at least one impurity-related acceptor level with an activation energy of ∼ 140 meV. A reduction in the annealing temperature was found to lead to a lower net ionized acceptor concentration, as well as a higher activation energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 601
Copyright
Copyright © Materials Research Society 1996

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References

1. Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
2. Nakamura, S., Mukai, T., Senoh, M., and Iwasa, N., Jpn. J. Appl. Phys. 31, L139 (1992).Google Scholar
3. Fischer, S., Wetzel, C., Haller, E. E., and Meyer, B. K., Appl. Phys. Lett. 67, 1298 (1995).Google Scholar
4. Tanaka, T., Watanabe, A., Amnano, H., Kobayashi, Y., Akasaki, I., Yamnazaki, S., and Koike, M., Appl. Phys. Lett. 65, 593 (1994).Google Scholar
5. Kimerling, L. C., J. Appl. Phys. 45, 1839 (1974).Google Scholar
6. Losee, D. L., J. Appl. Phys. 46, 2204 (1975).Google Scholar
7. Lu, H. and Bhat, I., to be published in Mat. Res. Soc. Syrmp. Proc. vol.395.Google Scholar
8. Glover, G. H., Solid-State Electron. 16, 973 (1973).Google Scholar
9. Schibli, E. and Milnes, A. G., Solid-State Electron. 11, 323 (1968).Google Scholar
10. Oldham, W. G. and Naik, S. S., Solid-State Electron. 15, 1085 (1972).Google Scholar
11. Casey, H. C., Cho, A. Y., Lang, D. V., Nicollian, E. H., and Foy, P. W., J. Appl. Phys. 50, 3484 (1979).Google Scholar
12. Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
13. Ohba, Y. and Hatano, A., Jpn. J. Appl. Phys. 33, L1367 (1994).Google Scholar
14. Götz, W., Johnson, N. M., Walker, J., Botur, D. P., and Street, R. A., Appl. Phys. Lett. 68, 667 (1996).Google Scholar
15. Brandt, M. S., Ager, J. W., Götz, W., Johnson, N. M., Harris, J. S., Molnar, R. J., and Moustakas, T. D., Phys. Rev. B 49, 14758 (1994).Google Scholar