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ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs

Published online by Cambridge University Press:  10 February 2011

M. J. Cich ,
R. Zhao ,
Y. Park ,
P. Specht  and
E. R. Weber
M. J. Cich
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
R. Zhao
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Y. Park
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
P. Specht
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
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Abstract

The electrical properties of low temperature MBE grown GaAs (LT-GaAs) in the n-i-n configuration have been studied. The mechanism of current rise in beryllium doped LT-GaAs is found to fit Frenkel-Poole type emission with a barrier height of 0.26 eV. However, this model does not fit undoped LT-GaAs. The breakdown field is considerably higher (up to 5.2* 105 V/cm) for beryllium doped films than undoped films, and depends on both growth temperature and beryllium concentration. Beryllium doping is also found to increase the resistivity of the preannealed films to values > 109 ω-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 129
Copyright
Copyright © Materials Research Society 1999

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References

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