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Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications

Published online by Cambridge University Press:  21 March 2011

Hyungsuk Jung ,
Hyundoek Yang ,
Kiju Im  and
Hyunsang Hwang
Hyungsuk Jung
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA Electronic mail: hwanghs@kjist.ac.kr
Hyundoek Yang
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA Electronic mail: hwanghs@kjist.ac.kr
Kiju Im
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA Electronic mail: hwanghs@kjist.ac.kr
Hyunsang Hwang
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA Electronic mail: hwanghs@kjist.ac.kr
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Abstract

This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaOxNy) with zirconium silicate (ZrSixOy) as an interfacial layer for use in gate dielectric applications. Compared with conventional native silicon oxide and oxynitride as an interfacial layer, tantalum oxynitride (TaOxNy) MOS capacitors using zirconium silicate (ZrSixOy) as an interfacial layer exhibit lower leakage current levels at the same equivalent oxide thickness. We were able to confirm TaOxNy/ZrSixOy stack structure by auger electron spectroscopy (AES) and transmission electron microscope (TEM) analysis. The estimated dielectric constant of TaOxNy and ZrSixOywere approximately 67 and 7, respectively. The zirconium silicate is a promising interfacial layer for future high-k gate dielectric applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K4.6
Copyright
Copyright © Materials Research Society 2001

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References

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