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Electrical Characteristics of Silicon p+n Diodes Fabricated BY B+ Implantation and Rapid Thermal Annealing in the Temperature Range 700 - 1000°C

Published online by Cambridge University Press:  28 February 2011

Akira Usami ,
Masayuki Katayama ,
Yutaka Tokuda  and
Takao Wada
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466, Japan
Masayuki Katayama
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466, Japan
Yutaka Tokuda
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota, Aichi 470-03, Japan
Takao Wada
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466, Japan
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Abstract

B+ implanted p+n diodes were fabricated by rapid thermal annealing (RTA) in the temperature range 700 - 1100°C. Values of series resistance of diodes decreased with the annealing temperatures. Leakage current (Ir) was independent of the RTA temperatures. Residual defect concentrations increased in the range 700 - 900°C and decreased in the range 1000 - 1100°C. Concentrations of defects with the energy levels of Ec- 0.33 and Ec - 0.48 eV were ∼ 1012 cm−3 for diodes fabricated at 1100°C. The growth of defects in the range 700 - 900°C was ascribed to the diffusion of defects from the implanted layer during annealing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 211
Copyright
Copyright © Materials Research Society 1986

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