Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-04T16:49:28.309Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characteristics of High Pressure Nitrided Oxides

Published online by Cambridge University Press:  28 February 2011

J.P. Ellul ,
S.P. Tay  and
A. Kalnitsky
J.P. Ellul
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, KIY 4H7
S.P. Tay
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, KIY 4H7
A. Kalnitsky
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, KIY 4H7
Get access

Abstract

In this paper, we present preliminary electrical characteristics of as-grown and NH3-nitrided thin gate and polysilicon oxides. Material characteristics are discussed in terms of ammonia concentration and nitridation temperature and pressure. Dielectric thicknesses obtained by ellipsometry, by Auger analysis and by capacitance-voltage measurements are compared. Electrical breakdown statistics for 10 atm and 1 atm pressure nitrided oxides are compared to as-grown thermal oxides.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 493
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wu, C.Y., King, C.W., Lee, M.K. and Chen, C.T., J. Electrochem. Soc., 129(7), 1559 (1982).Google Scholar
2. Ito, T., Nakamura, T. and Ishikawa, H., J. Electrochem. Soc., 129(1), 184 (1982).Google Scholar
3. Lai, S.K., Dong, D.W. and Hartstein, A., J. Electrochem. Soc., 129(9), 2042 (1982).Google Scholar
4. Wong, S.S. and Oldham, W.G., IEEE Trans ED., 32(5), 978 (1985).Google Scholar
5. Chiu, T.Y., Bernt, H. and Ruge, I., J. Electrochem. Soc., 129(2), 408 (1982).CrossRefGoogle Scholar
6. Hayafuji, Y. and Kajiwara, K., J. Electrochem. Soc., 129(9), 2102 (1982).Google Scholar
7. Chen, J.T., Kuiper, T., Tamminga, Y. and Toole, D., J. Electrochem. Soc., 130(11), 441C (1983).CrossRefGoogle Scholar
8. Tay, S-F., Ellul, J.P., King, M.I.H. and White, J.J., Extended Abstract #257, in Proceedings, Symposium on Reduced Temperature Processing for VLSI, (Electrochem. Soc., October 1985).Google Scholar