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Efficient Luminescence from GaAs Nanocrystals in SiO2 Matrices

Published online by Cambridge University Press:  09 August 2011

Y. Kanemitsu ,
H. Tanaka ,
S. Mimura ,
S. Okamoto ,
T. Kushida ,
K. S. Min  and
H. A. Atwater
Y. Kanemitsu
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan, sunyu@ms.aist-nara.ac.jp
H. Tanaka
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan, sunyu@ms.aist-nara.ac.jp
S. Mimura
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan, sunyu@ms.aist-nara.ac.jp
S. Okamoto
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan, sunyu@ms.aist-nara.ac.jp
T. Kushida
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan, sunyu@ms.aist-nara.ac.jp
K. S. Min
Affiliation:
Thomas J.Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA
H. A. Atwater
Affiliation:
Thomas J.Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA
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Abstract

We have fabricated zincblende GaAs nanocrystals by means of Ga+ and As+ coimplantation into SiO2 matrices. A broad photoluminescence band is observed in the visible spectral region. Under selective excitation at energies within the visible luminescence band, GaAs-related phonon structures are observed at low temperatures. The photoluminescence mechanism in GaA/SiO2 nanocomposites is discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 223
Copyright
Copyright © Materials Research Society 1999

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