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Effects on Metal/Metal-Oxide Interface Adhesion Due to Electron and Ion Irradiation

Published online by Cambridge University Press:  22 February 2011

J. Bøttiger ,
J. E. E. Baglin ,
V. Brusic ,
G. J. Clark  and
D. Anfiteatro
J. Bøttiger
Affiliation:
Ibm Thomas J. Watson Research Center, Yorktown Heights, New York 10598
J. E. E. Baglin
Affiliation:
Ibm Thomas J. Watson Research Center, Yorktown Heights, New York 10598
V. Brusic
Affiliation:
Ibm Thomas J. Watson Research Center, Yorktown Heights, New York 10598
G. J. Clark
Affiliation:
Ibm Thomas J. Watson Research Center, Yorktown Heights, New York 10598
D. Anfiteatro
Affiliation:
Ibm Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

The influence of electron and ion irradiation on the adhesion at chromium-copper thin film interfaces has been studied. The measurements were carried out with different types and thicknesses of well-characterized oxides at the interfaces. The electron energies were varied between 5 and 10 keV, with doses up to 10 18cm −2. lons of He +Ne+and P+ were used in the range of energies between 150 keVand 1.0 MeV, with fluences ranging from 1015 cm−2 to 6× 10 16cm−2 . Substantial improvement of the adhesion is observed in cases where the beam has a significant nuclear stopping power component. Electronic processes may also play a role in improving adhesion, although they are not dominant in the case of the present films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 203
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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