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Effects of X-ray and γ-ray Irradiation on GaN

Published online by Cambridge University Press:  10 February 2011

C. H. Qiu ,
M. W. Leksono ,
J. I. Pankove ,
C. Rossington  and
E. E. Haller
C. H. Qiu
Affiliation:
Astralux, Inc., 2500 Central Ave., Boulder, CO 80301, qiu@schof.colorado.edu
M. W. Leksono
Affiliation:
Astralux, Inc., 2500 Central Ave., Boulder, CO 80301, qiu@schof.colorado.edu
J. I. Pankove
Affiliation:
Astralux, Inc., 2500 Central Ave., Boulder, CO 80301, qiu@schof.colorado.edu
C. Rossington
Affiliation:
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
E. E. Haller
Affiliation:
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
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Abstract

As part of the feasibility study of using III-V nitride semiconductors for x-ray and γ-ray detection, the irradiation effects on GaN were investigated. GaN films with very different electrical resistivity and electron concentration were used in the study. The electron mobility, photoconductivity spectra, and photo-luminescence spectra were measured before and after irradiation. An enhanced ημτ product for undoped GaN films and an enhanced blue luminescence for a Zn-doped sample were observed after irradiation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 585
Copyright
Copyright © Materials Research Society 1997

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References

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