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Effects of the Combined Exposure of Silicon to Beams of Low-Energy Argon Ions and Halogen-Containing Molecules

Published online by Cambridge University Press:  21 February 2011

A. W. Kolfschoten
A. W. Kolfschoten*
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
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Abstract

This paper reviews our results of modulated ion beam studies of the ion-assisted etching of Si. It is shown that the experimental data of the Si(C12, Ar+) reactive system can be described by a model based upon an ion-bombardment induced amorphousness of the Si substrate and the formation of a mixed surface region of several atomic layers of chlorine, argon and silicon. It is also shown that the model is in general agreement with the experimental data of the Si(XeF2, Ar+) and C(H, Ar+) systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 143
Copyright
Copyright © Materials Research Society 1985

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