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Effects of Pt and W2N/W Bottom Electrodes on Dielectric Properties of BaTiO3 Thin Films

Published online by Cambridge University Press:  25 February 2011

Yong Tae Kim ,
Chang Woo Lee  and
Jeong-gun Lee
Yong Tae Kim
Affiliation:
Semiconductor Materials Laboratory, Division of Electronics and Information Technology, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea
Chang Woo Lee
Affiliation:
Semiconductor Materials Laboratory, Division of Electronics and Information Technology, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea Department of Physics, Korea Advanced Institute of Science and Technology, P.O. Box 305-701, Taejon, Korea
Jeong-gun Lee
Affiliation:
Semiconductor Materials Laboratory, Division of Electronics and Information Technology, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea Department of Physics, Korea University, Seoul, Korea
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Abstract

Effects of Pt and W2N/W bottom electrodes on dielectric properties of 1000 Å thick BaTiO3 thin film capacitors are studied. The tetragonality of BaTiO3 on W2N/W electrode is better than that of BaTiO3 on Pt electrode and leakage current of W2N/W/BaTiO3/Au capacitor is four orders of magnitude less than that of Pt/BaTiO3/Au capacitor. The excellent properties of W2N/W/BaTiO3/Au capacitor is ascribed to both of the tetragonal structure of WO3 formed at the interface of W/BaTiO3 and the diffusion barrier property of W2N preventing the interfacial reaction among bottom electrodes, BaTiO3, and Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 435
Copyright
Copyright © Materials Research Society 1995

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References

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